[PDF]    http://dx.doi.org/10.3952/lithjphys.44406

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 44, 275–282 (2004)


PECULIARITIES OF DEEP IMPURITY RELATED CARRIER GENERATION IN CdTe AND GaAs CRYSTALS
A. Kadys, M. Sūdžius, and K. Jarašiūnas
Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9, LT-10222 Vilnius, Lithuania
E-mail: arunas.kadys@ff.vu.lt

Received 8 December 2003

Degenerate four-wave mixing in GaAs:EL2 and CdTe:V at various modulation depths and intensities of light interference field has been carried out using 10 ns duration laser pulses at 1.06 μm wavelength. We demonstrate a novel possibility of light diffraction technique, based on carrier generation by light interference pattern with different modulation depth m and varying modulation intensity. Significant decrease of diffraction efficiency at the same modulation intensity but at differentmvalue was observed in exposure characteristics of light diffraction that is attributed to exhaustion of deep trap related carrier generation. This effect is found to be characteristic of the analysed photorefractive crystals and was not observed in Si.
Keywords: four-wave mixing, deep states in semiconductors, numerical modelling
PACS: 71.55.–i, 78.20.Bh


GILIŲ LYGMENŲ ĮTAKOTI KRŪVININKŲ GENERACIJOS YPATUMAI CdTe IR GaAs KRISTALUOSE
A. Kadys, M. Sūdžius, K. Jarašiūnas
Vilniaus universitetas, Vilnius, Lietuva

Naudojant išsigimusio keturių bangų maišymo metodiką, buvo tyrinėti CdTe:V ir GaAs:EL2 tūriniai kristalai, gardelės sužadinimui ir jos nuskaitymui panaudojant 10 ns trukmės ir 1064 nm bangos ilgio lazerio šviesos impulsus. Iš rezultatų matyti, kad fotorefraktyviuose kristaluose difrakcijos efektyvumas labai priklauso nuo interferencinio lauko moduliacijos kokybės: išlaikant pastovų moduliuojantį žadinimo intensyvumą, difrakcijos efektyvumas mažėja, mažėjant moduliacijos gyliui m. Tuo tarpu ši priklausomybė Si kristale nebuvo pastebėta. Pasitelkus skaitmeninį modeliavimą, parodyta, kad, vykstant efektyviam generacijos centrų perelektrinimui šviesa, difrakcijos efektyvumo sumažėjimas, mažėjant interferencinio lauko moduliacijos gyliui, priklauso nuo generacijos kanalo išsekinimo. Šį efektą apibūdina ne tik difrakcijos efektyvumo, bet ir ekspozicinės kreivės polinkio sumažėjimas.


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