[PDF]    http://dx.doi.org/10.3952/lithjphys.44602

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 44, 421–425 (2004)


COMPLEX DIELECTRIC CONSTANT OF Cd0.8Mn0.2Te CRYSTALS NEAR THE FUNDAMENTAL ABSORPTION EDGE
L. Safonova, R. Brazis, and R. Narkowicz
Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

Received 15 December 2003

The complex dielectric constant of Cd0.8Mn0.2Te single crystals is determined from reflection measurements in the photon energy range from 1.75 to 2 eV at the lattice temperature T = 2 K. The light reflection model includes exciton absorption and dispersive background dielectric constant contribution. The same model is found to be efficient in describing the band of nonreciprocal reflection arising in nonzero magnetic field in the Voigt geometry.
Keywords: diluted magnetic semiconductors, excitons, light absorption and reflection
PACS: 71.35.+z, 75.50.Pp, 78.20.Ci, 78.20.Ls, 78.55.Et


Cd0,8Mn0,2Te KRISTALŲ KOMPLEKSINĖ DIELEKTRINĖ SKVARBA TIES FUNDAMENTINĖS SUGERTIES KRAŠTU
L. Safonova, R. Brazis, R. Narkowicz
Puslaidininkių fizikos institutas, Vilnius, Lietuva

Iš šviesos atspindžio matavimo duomenų 1,75–2 eV fotonų energijos verčių ruože įvertinta Cd0,8Mn0,2Te kristalų kompleksinė dielektrinė skvarba T = 2 K gardelės temperatūroje. Šviesos atspindžio modelyje atsižvelgta į eksitoninę sugertį ir liktinį dispersinį kristalo įnašą į dielektrinę skvarbą. Taikant modelį šviesos atspindžio neapgręžiamumui aprašyti magnetiniame lauke Voigt’o geometrijoje, kai šviesa krenta į kristalą įžambiai, pasiektas geras eksperimento ir skaičiavimo duomenų atitikimas; surasti eksitono fizikiniai parametrai (Zeeman’o suskilimas, eksitono linijos plotis).


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