[PDF]    http://dx.doi.org/10.3952/lithjphys.45609

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 45, 477–480 (2005)


DRIFT VELOCITY MEASUREMENT AND HOT ELECTRON CAPTURE IN AlGaN / AlN / GaN
O. Kiprijanovič, A. Matulionis, J. Liberis, and L. Ardaravičius
Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
E-mail: matulionis@pfi.lt

Received 26 August 2005

Nanosecond technique was used to control the electron density during the electron drift velocity measurement in the absence of channel self-heating. A threshold-type hot electron capture is determined to be reducing the density of mobile electrons: the reduction up to 30% is found in the investigated range of fields below 65 kV/cm at room temperature. No change in electron density is found in the range below 25 kV/cm. The corrected drift velocity data are presented.
Keywords: nitride heterostructures, hot electrons, drift velocity, two-dimensional electron gas, AlGaN / AlN / GaN
PACS: 72.20.-I; 72.20.Ht; 73.21.Fg


KARŠTŲJŲ ELEKTRONŲ PAGAVIMAS IR JŲ DREIFO GREIČIO MATAVIMAS AlGaN / AlN / GaN
O. Kiprijanovič, A. Matulionis, J. Liberis, L. Ardaravičius
Puslaidininkių fizikos institutas, Vilnius, Lietuva

Nanosekundine impulsine technika, leidžiančia išvengti kvantinės protakos kaitimo, buvo matuojamas elektronų dreifo greitis ir elektronų tankio pokytis. Pastebėta, kad dėl karštųjų elektronų pagavimo sumažėja judriųjų elektronų tankis. Sumažėjimas pasiekia net 30% kambario temperatūroje, kai lauko stipris artimas 65 kV/cm. Kai laukai silpnesni už 25 kV/cm, elektronų tankio kitimo nepastebėta. Pateikta pakoreguota, atsižvelgiant į elektronų tankio kitimą, elektronų dreifo greičio priklausomybė nuo elektrinio lauko stiprio.


References / Nuorodos


[1] L.F. Eastman, V. Tilak, V. Kaper, J. Smart, R. Thompson, B. Green, J.R. Shealy, and T. Prunty, Progress in high-power, high frequency AlGaN / GaN HEMTs, Phys. Status Solidi A 194(2), 433–438 (2002),
http://dx.doi.org/10.1002/1521-396X(200212)194:2<433::AID-PSSA433>3.0.CO;2-R
[2] U.K. Mishra, Gallium nitride electronics: Watt is the limit?, in: IEEE 62nd Device Research Conference Digest (Notre Dame, Indiana, USA, June 21–24, 2004) pp. 3–5,
http://dx.doi.org/10.1109/DRC.2004.1367754
[3] Y. Ando, Y. Okamoto, T. Nakayama, T. Inoue, K. Hataya, H. Miyamoto, M. Senda, K. Hirata, M. Kosaki, N. Shibata, and M. Kuzuhara, High power AlGaN / GaN heterojunction FETs for base station applications, in: IEEE 62nd Device Research Conference Digest (Notre Dame, Indiana, USA, June 21–24, 2004) p. 31,
http://dx.doi.org/10.1109/DRC.2004.1367769
[4] L.F. Eastman, V. Tilak, J. Smart, B.M. Green, E.M. Chumbes, R. Dimitrov, H. Kim, O.S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W.J. Schaff, and J.R. Shealy, Undoped AlGaN / GaN HEMTs for microwave power amplification, IEEE Trans. Electron Devices 48(3), 479–485 (2001),
http://dx.doi.org/10.1109/16.906439
[5] V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, AlGaN / GaN HEMTs on SiC with fT of over 120 GHz, IEEE Electron Device Lett. 23(8), 455–457 (2002),
http://dx.doi.org/10.1109/LED.2002.801303
[6] A. Vertiatchikh, H. Kim, W.J. Schaff, L.F. Eastman, R. Thompson, V. Kaper, and R. Shealy, Bias dependent frequency response of AlGaN / GaN HEMT, in: Proceedings of the 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (Fürigen, Switzerland, 2003) pp. 41–42
[7] C.H. Oxley and M.J. Uren, Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor, IEEE Trans. Electron Devices 52(2), 165–169 (2005),
http://dx.doi.org/10.1109/TED.2004.842719
[8] T.-H. Yu and K. Brennan, Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures, J. Appl. Phys. 91(6), 3730–3736 (2002),
http://dx.doi.org/10.1063/1.1448889
[9] M. Wraback, H. Shen, S. Rudin, E. Bellotti, M. Goano, J.C. Carrano, C.J. Collins, J.C. Campbell, and R.D. Dupuis, Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN, Appl. Phys. Lett. 82(21), 3674–3676 (2003),
http://dx.doi.org/10.1063/1.1577833
[10] J.M. Barker, D.K. Ferry, S.M. Goodnick, D.D. Koleske, A.E. Wickenden, and R.L. Henry, Measurements of the velocity-field characteristic in AlGaN / GaN heterostructures, Microelectronics Eng. 63(1–3), 193–197 (2002),
http://dx.doi.org/10.1016/S0167-9317(02)00627-5
[11] L. Ardaravičius, J. Liberis, A. Matulionis, L.F. Eastman, J.R. Shealy, and A. Vertiatchikh, Phys. Status Solidi A 201(2), 203–206 (2004),
http://dx.doi.org/10.1002/pssa.200303901
[12] M. Ramonas, A. Matulionis, and L. Rota, Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN / GaN two-dimensional electron gas channel, Semicond. Sci. Technol. 18(2), 118–123 (2003),
http://dx.doi.org/10.1088/0268-1242/18/2/310
[13] B.K. Ridley, W.J. Schaff, and L.F. Eastman, Hotphonon-induced velocity saturation in GaN, J. Appl. Phys. 96(3), 1499–1502 (2004),
http://dx.doi.org/10.1063/1.1762999
[14] J.M. Barker, D.K. Ferry, S.M. Goodnick, D.D. Koleske, A. Allerman, and R.L. Shul, Effect of surface treatment on the velocity-field characteristics of AlGaN / GaN heterostructures, Semicond. Sci. Technol. 19(4), S478–S480 (2004),
http://dx.doi.org/10.1088/0268-1242/19/4/157
[15] L. Ardaravičius, A. Matulionis, J. Liberis, O. Kiprijanovič, M. Ramonas, L.F. Eastman, J.R. Shealy, and A. Vertiatchikh, Electron drift velocity in AlGaN / GaN channel at high electric fields, Appl. Phys. Lett. 83(19), 4038–4040 (2003),
http://dx.doi.org/10.1063/1.1626258
[16] J.M. Barker, D.K. Ferry, S.M. Goodnick, D.D. Koleske, A. Allerman, and R.L. Shul, High field transport in GaN / AlGaN heterostructures, J. Vac. Sci. Technol. B 22(4), 2045–2050 (2004),
http://dx.doi.org/10.1116/1.1775199
[17] L. Ardaravičius, M. Ramonas, O. Kiprijanovič, J. Liberis, A. Matulionis, L.F. Eastman, J.R. Shealy, X. Chen, and Y. Sun, Comparative analysis of hot-electron transport in AlGaN / GaN and AlGaN / AlN / GaN, Phys. Status Solidi A 200(5), 808–811 (2005),
http://dx.doi.org/10.1002/pssa.200461618
[18] M. Ramonas, A. Matulionis, J. Liberis, L.F. Eastman, X. Chen, and Y.-J. Sun, Hot-phonon effect on power dissipation in a biased AlxGa1−xN / AlN / GaN channel, Phys. Rev. B 71(7), 075324-1–8 (2005),
http://dx.doi.org/10.1103/PhysRevB.68.035338