Lithuanian Journal of Physics article / Lietuvos fizikos žurnalo straipsnis

[PDF] http://dx.doi.org/10.3952/lithjphys.47307

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 47, 297–302 (2007)

FLUCTUATION TECHNIQUE FOR INVESTIGATION OF ULTRAFAST PROCESSES*
A. Matulionis
Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

Received 11 June 2007

Microwave fluctuations contain information on hot-electron energy relaxation, intervalley transfer, real-space transfer, and other ultrafast electronic processes in semiconductors and semiconductor structures. Based on this, the novel fluctuation technique was developed for investigation of ultrafast hot-phonon effects in two-dimensional (2D) and three-dimensional (3D) channels of importance for high-speed electronics. The hot-phonon lifetime (deduced from the hot-electron fluctuations) is in good agreement with the a posteriori reported data obtained through femtosecond-laser pump-probe experiments. Moreover, the fluctuation technique demonstrates the unique experimental possibility to study the lifetime as a function of the electron temperature in a voltage-biased 2D channel, while neither Raman photon scattering nor phonon-assisted inter-sub-band absorption has provided data of this sort as yet.

Keywords: microwave noise, two-dimensional channels, GaN, high electric fields, hot phonons

PACS: 73.50.Fq, 73.50.Td, 73.61.Ey, 73.63.Hs
*The report presented at the 37th Lithuanian National Physics Conference, 11–13 June 2007, Vilnius, Lithuania.

FLIUKTUACINIAI METODAI LABAI SPARTIEMS VYKSMAMS TIRTI
A. Matulionis
Puslaidininkių fizikos institutas, Vilnius, Lietuva

Fliuktuaciniai metodai karštųjų elektronų energijos relaksacijos, tarpslėnių šuolių, šuolių tarp kanalų, karštųjų fononų pusamžio ir kitų labai sparčių vyksmų eksperimentiniam tyrimui puslaidininkiuose ir jų dariniuose sėkmingai varžosi su labiau įprastais atsako metodais. Optinių fononų pusamžis darinyje su dvimačiu srovės kanalu pirmą kartą išmatuotas būtent fliuktuaciniu, o ne kokiu kitu metodu. Šis rezultatas tik po poros metų buvo patvirtintas tiriant fononais skatinamą spinduliuotės sugertį. Rezultatai gerai dera su pusamžiu, kuris neseniai buvo išmatuotas Ramano šviesos sklaidos metodu. Vis dėlto Ramano metodu dar iki šiol neišmatuotas fononų pusamžis elektronikai svarbiame dvimačiame kanale su didelio tankio elektronų dujomis. Taip pat šiuo metu dar nežinomas joks kitas metodas, be fliuktuacinio, tinkamas matuoti fononų pusamžio priklausomybei nuo karštųjų elektronų temperatūros. Fliuktuacinių metodų reikšmė auga, mažėjant darinių matmenims.

References / Nuorodos

[1] A. Matulionis, Noise, hot carrier effects, in: Wiley Encyclopedia of Electrical and Electronics Engineering, Vol. 14, ed. J.G. Webster (Wiley, New York, 1999) pp. 410–428,
http://dx.doi.org/10.1002/047134608X.W3155.pub2
[2] H.L. Hartnagel, R. Katilius, and A. Matulionis, Microwave Noise in Semiconductor Devices (Wiley, New York, 2001)
[3] A. Matulionis, V. Aninkevičius, and J. Liberis, Hot-electron velocity fluctuations in two-dimensional electron gas channels, Microelectron. Rel. 40(11), 1803–1814 (2000),
http://dx.doi.org/10.1016/S0026-2714(00)00081-0
[4] A. Matulionis and I. Matulionienė, Hot-electron noise in III–V semiconductor structures for ultrafast devices, in: Noise and Fluctuations Control in Electronic Devices, ed. A.A. Balandin (Stevenson Ranch, American Scientific Publishers, 2002) pp. 249–266
[5] P. Kocevar, Hot phonon dynamics, Physica B&C 88(1–3), 155–163 (1985),
http://dx.doi.org/10.1016/0378-4363(85)90336-5
[6] A. Matulionis, Hot phonons in GaN channels for HEMTs, Phys. Status Solidi A 203(10), 2313–2325 (2006),
http://dx.doi.org/10.1002/pssa.200622101
[7] A. Matulionis and I. Matulionienė, Accumulation of hot phonons in GaN and related structures, invited in: Proceedings of SPIE on Gallium Nitride Materials and Devices II, Vol. 6473, eds. H. Morkoç and C.W. Litton (SPIE, Washington, 2007) pp. 64730P-1–15,
http://dx.doi.org/10.1117/12.703451
[8] D. Streit, InP MMICs for radiometer applications, in: Proceedings of the WOCSDICE 2007, ed. G. Meneghesso (University of Padova, 2007) p. 163
[9] T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra, AlGaN/GaN high electron mobility transistors with InGaN back-barriers, IEEE Electron Device Lett. 27(1), 13–15 (2006),
http://dx.doi.org/10.1109/LED.2005.860882
[10] M. Higashiwaki, T. Matsui, and T. Mimura, AlGaN/GaN MIS-HFETs with f_T of 163 GHz using cat-CVD SiN gate-insulating and passivation layers, IEEE Electron Device Lett. 27(1), 16–18 (2006),
http://dx.doi.org/10.1109/LED.2005.860884
[11] M. Artaki and P.J. Price, Hot phonon effects in silicon field effect transistors, J. Appl. Phys. 65(3), 1317–1320 (1989),
http://dx.doi.org/10.1063/1.343027
[12] B.K. Ridley, W.J. Schaff, and L.F. Eastman, Hot-phonon-induced velocity saturation in GaN, J. Appl. Phys. 96(3), 1499–1502 (2004),
http://dx.doi.org/10.1063/1.1762999
[13] J.A. Kash and J.C. Tsang, Nonequilibrium phonons in semiconductors, in: Spectroscopy of Nonequilibrium Electrons and Phonons, eds. C.V. Shank and B.P. Zakharchenya (Elsevier, North Holland, 1992) pp. 113–166,
http://dx.doi.org/10.1016/B978-0-444-89637-7.50008-9
[14] K.T. Tsen, D.K. Ferry, A. Botchkarev, B. Sverdlov, A. Salvador, and H. Morkoç, Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN, Appl. Phys. Lett. 72(17), 2132–2134 (1998),
http://dx.doi.org/10.1063/1.121299
[15] K.T. Tsen, J.G. Kiang, D.K. Ferry, and H. Morkoç, Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on injected carrier density, Appl. Phys. Lett. 89(11), 112111-1–3 (2006),
http://dx.doi.org/10.1063/1.2349315
[16] B.K. Ridley and A. Dyson, The lifetime of coupled plasmon–phonon modes, in: Proceedings of the WOCSDICE 2007, ed. G. Meneghesso (University of Padova, 2007) pp. 225–228
[17] K.T. Tsen and H. Morkoc, Population relaxation time of nonequilibrium LO phonons and electron–phonon interactions in GaAs–Al_xGa_1–xAs multiple-quantum-well structures, Phys. Rev. B 34(6), 4412–4414 (1986),
http://dx.doi.org/10.1103/PhysRevB.34.4412
[18] M.C. Tatham, J.F. Ryan, and C.T. Foxon, Time-resolved Raman scattering measurement of electron–optical phonon intersubband relaxation in GaAs quantum wells, Solid-State Electron. 32(12), 1497–1501 (1989),
http://dx.doi.org/10.1016/0038-1101(89)90263-3
[19] A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, L.F. Eastman, J.R. Shealy, V. Tilak, and A. Vertiatchikh, Hot-phonon temperature and lifetime in a biased Al_xGa_1–_xN/GaN channel estimated from noise analysis, Phys. Rev. B 68(3), 035338-1–7 (2003),
http://dx.doi.org/10.1103/PhysRevB.68.035338
[20] Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W.J. Schaff, and L.F. Eastman, Optical phonon sidebands of electronic inter-subband absorption in strongly polar semiconductor heterostructures, Phys. Rev. Lett. 94(3), 037403-1–4 (2005),
http://dx.doi.org/10.1103/PhysRevLett.94.037403
[21] Sh.M. Kogan and A.Ya. Shul'man, Electric fluctuations in solid state plasma at high electric fields, Fiz. Tverd. Tela 9(8), 2259–2264 (1967) [Sov. Phys. Solid State 9(8), 1771 (1968)]
[22] R. Katilius and M. Rudan, Noise as a tool for tracing effects of nonclassical correlations in a degenerate nonequilibrium electron gas, Phys. Rev. B 74(23), 233101-1–4 (2006),
http://dx.doi.org/10.1103/PhysRevB.74.233101
[23] M. Ramonas, A. Matulionis, J. Liberis, L.F. Eastman, X. Chen, and Y.J. Sun, Hot-phonon effect on power dissipation in a biased AlxGa1–xN/AlN/GaN channel, Phys. Rev. B 71(7), 075324-1–8 (2005),
http://dx.doi.org/10.1103/PhysRevB.71.075324
[24] M. Ramonas and A. Matulionis, Monte Carlo simulation of hot-phonon effects in biased nitride channels, in: New Research on Semiconductors, ed. T.B. Elliot (Nova Science Publishers, 2006) pp. 95–121
[25] A. Matulionis, J. Liberis, and M. Ramonas, Microwave noise in biased AlGaN / GaN and AlGaN / AlN / GaN channels, in: AIP Conf. Proc. Noise and Fluctuations, Vol. CP780, eds. T. González, J. Mateos, and D. Pardo (AIP, New York, 2005) pp. 105–108,
http://dx.doi.org/10.1063/1.2036709
[26] N. Shigekawa, K. Shiojima, and T. Suemitsu, Optical study of high-biased AlGaN/GaN high-electron-mobility transistors, J. Appl. Phys. 92(1), 531–535 (2002),
http://dx.doi.org/10.1063/1.1481973
[27] K. Wang, J. Simon, N. Goel, and D. Jena, Optical study of hot-electron transport in GaN: Signatures of the hot-phonon effect, Appl. Phys. Lett. 88(2), 022103-1–3 (2006),
http://dx.doi.org/10.1063/1.2163709
[28] A. Matulionis, J. Liberis, L. Ardaravičius, M. Ramonas, I. Matulionienė, and J. Smart, Hot-electron energy relaxation time in AlGaN/GaN, Semicond. Sci. Technol. 17(3), L9–L14 (2002),
http://dx.doi.org/10.1088/0268-1242/17/3/101
[29] A. Matulionis, R. Katilius, J. Liberis, L. Ardaravičius, L.F. Eastman, J.R. Shealy, and J. Smart, Hot-electron temperature relaxation time in a 2-DEG: AlGaN/GaN at 80 K, J. Appl. Phys. 92(8), 4490–4497 (2002).
http://dx.doi.org/10.1063/1.1510166
[30] A. Matulionis, J. Liberis, L. Ardaravičius, M. Ramonas, T. Zubkutė, I. Matulionienė, L.F. Eastman, J.R. Shealy, J. Smart, D. Pavlidis, and S. Hubbard, Fast and ultrafast processes in AlGaN/GaN, Phys. Status Solidi B 234(3), 826–829 (2002),
http://dx.doi.org/10.1002/1521-3951(200212)234:3<826::AID-PSSB826>3.0.CO;2-4
[31] J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, and D. Jena, Hot phonons in Si-doped GaN, Appl. Phys. Lett. 89(20), 202117-1–3 (2006),
http://dx.doi.org/10.1063/1.2388866
[32] J. Liberis, I. Matulionienė, A. Matulionis, M. Lemme, H. Kurz, and M. Först, Hot-phonon temperature and lifetime in biased boron-implanted SiO₂/Si/SiO₂ channels, Semicond. Sci. Technol. 21(6), 803–807 (2006),
http://dx.doi.org/10.1088/0268-1242/21/6/017
[33] M. Hase, M. Kitajima, A.M. Constantinescu, and H. Petek, The birth of a quasiparticle in silicon observed in time–frequency space, Nature 426(6962), 51–92 (2003),
http://dx.doi.org/10.1038/nature02044
[34] A. Matulionis, J. Liberis, I. Matulionienė, H.Y. Cha, L.F. Eastman, and M.G. Spencer, Hot-phonon temperature and lifetime in biased 4H-SiC, J. Appl. Phys. 96(11), 6439–6444 (2004),
http://dx.doi.org/10.1063/1.1812598
[35] V. Aninkevičius, A. Matulionis, and I. Matulionienė, Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP, Semicond. Sci. Technol. 20(2), 109–114 (2005),
http://dx.doi.org/10.1088/0268-1242/20/2/001
[36] A. Matulionis, J. Liberis, L. Ardaravičius, L.F. Eastman, J.R. Shealy, and A. Vertiatchikh, Hot-phonon lifetime in AlGaN/GaN at high lattice temperatures, Semicond. Sci. Technol. 19(4), S421–S423 (2004),
http://dx.doi.org/10.1088/0268-1242/19/4/138
[37] A. Matulionis and J. Liberis, Microwave noise in AlGaN/GaN channels, IEE Proc. Circuits Devices Syst. 151(2), 148–154 (2004),
http://digital-library.theiet.org/doi/abs/10.1049/ip-cds%3A20040199
[38] T. Zubkutė and A. Matulionis, Hot-electron energy dissipation and interelectron collisions in GaN-WZ, Semicond. Sci. Technol. 17(11), 1144–1148 (2002),
http://dx.doi.org/10.1088/0268-1242/17/11/302