C. Skierbiszewski a, b,
M. Siekacz a, b, H. Turski a, M. Sawicka a,
A. Feduniewicz-Żmuda a, P. Perlin a, b, T.
Suski a, Z. Wasilewski c, I. Grzegory a,
and S. Porowski a
a Institute of High
Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37,
01-142 Warszawa, Poland
E-mail: czeslaw@unipress.waw.pl
b TopGaN Ltd,
Sokołowska 29/37, 01-142 Warszawa, Poland
c Institute for
Microstructural Sciences, National Research Council, 1200
Montreal Road, Ottawa, K1A 0R6 Canada
Received 28 August 2011; accepted 1 December 2011
We present recent progress in the
growth of nitride-based laser diodes (LDs) made by plasma assisted
molecular beam epitaxy (PAMBE). This technology is ammonia-free,
and nitrogen for the growth is activated by RF plasma source from
nitrogen molecules. The demonstration of continuous wave
blue-violet InGaN LDs has opened a new perspective for PAMBE in
optoelectronics. We demonstrate the laser diodes grown by PAMBE
operating at the range from 410 nm to 455 nm. The key factors
which allow us to extend the lasing wavelength to 455 nm are (a)
improvements in the growth of InGaN quantum wells with high
nitrogen flux in PAMBE, and (b) design of the laser diode
structure. We also report on optically pumped lasing at 501 nm on
InGaN laser structures which show that there are no intrinsic
limitations in PAMBE technology for the growth of green LDs.
C. Skierbiszewski a, b,
M. Siekacz a, b, H. Turski a, M. Sawicka a,
A. Feduniewicz-Żmuda a, P. Perlin a, b, T.
Suski a, Z. Wasilewski c, I. Grzegory a,
S. Porowski a
Aprašyti naujausi pasiekimai
auginant nitrido pagrindo lazerinius diodus (LD) plazma papildomo
molekulinio spindulio epitaksijos būdu (angl.
plasma assisted molecular beam
epitaxy,
PAMBE).
Šioje technologijoje nenaudojamas amoniakas, o auginimui
reikalingą azotą iš azoto molekulių aktyvuoja radijo dažninis
plazmos šaltinis. Nuolatinio švytėjimo mėlynai violetinių InGaN LD
sukūrimas atvėrė naują perspektyvą naudoti PAMBE elektronikoje.
Pademonstruoti lazeriniai diodai, išauginti PAMBE būdu, veikiantys
410–455 nm srityje. Pagrindiniai veiksniai, leidžiantys pailginti
lazerinės šviesos bangą iki 455 nm, yra (a) InGaN kvantinių
šulinių auginimo patobulinimai esant dideliam azoto srautui
naudojant PAMBE ir (b) lazerinio diodo konstrukcija. Taip pat
pranešama apie optiškai žadinamą lazerinę 501 nm emisiją InGaN
dariniuose, o tai reiškia, kad nėra vidinių kliūčių išauginti
žalios šviesos LD naudojant PAMBE technologiją.
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