[PDF]     http://dx.doi.org/10.3952/lithjphys.51405

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 51, 324–329 (2011)


INVESTIGATION OF 2D PLASMA RESONANCES IN HEMTS BY USING ELECTRO-OPTICAL SAMPLING TECHNIQUE
J. Torres a, L. Varani a, F. Teppe b, W. Knap b, S. Boubanga-Tombet c, T. Otsuji c, P. Shiktorov d, E. Starikov d, and V. Gružinskis d
a Institut d’Électronique du Sud - TeraLab (CNRS UMR 5214), Université Montpellier II, Place Bataillon, 34 095 Montpellier Cedex 5, France
b Laboratoire Charles-Coulomb - TeraLab (CNRS UMR 5221), Université Montpellier II, Place Bataillon, 34 095 Montpellier Cedex 5, France
c Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
d Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
E-mail: jane@pav.pfi.lt

Received 27 August 2011; accepted 1 December 2011

Possibilities and advantages of the electro-optical sampling (EOS) technique for the investigation of excitation of THz-range 2D plasma waves in FET/HEMT channels are considered both experimentally and theoretically. It is experimentally demonstrated that the EOS technique allows one to identify an excitation of 2D plasma waves in the HEMT channel under a given working point determined by external embedding circuits. Theoretical simulations show that the development of the instability of 2D plasma waves can be easily identified in the framework of the EOS technique.
Keywords: electro-optical sampling, terahertz radiation emission, plasma waves
PACS: 72.20.Ht, 72.30.+q


DVIMATĖS PLAZMOS REZONANSŲ DIDELIO ELEKTRONŲ JUDRIO TRANZISTORIUOSE TYRIMAS, TAIKANT ELEKTROOPTINĖS ATRANKOS METODĄ
J. Torres a, L. Varani a, F. Teppe b, W. Knap b, S. Boubanga-Tombet c, T. Otsuji c, P. Shiktorov d, E. Starikov d, V. Gružinskis d
a Monpelje II universiteto Pietinis elektronikos institutas, Monpelje, Prancūzija
b Monpelje II universiteto Šarlio Kulono laboratorija, Monpelje, Prancūzija
c Tohoku universitetas, Sendai, Japonija
d Fizinių ir technologijos mokslų centro Puslaidininkių fizikos institutas, Vilnius, Lietuva

Eksperimentiškai ir teoriškai išnagrinėtos elektrooptinės atrankos (EOA) metodo galimybės ir privalumai tiriant dvimatės plazmos bangų sužadinimą lauko tranzistorių arba didelio elektronų judrio tranzistorių (FET/HEMT) kanaluose. Eksperimentiškai parodyta, kad EOA metodas leidžia identifikuoti dvimatės plazmos bangas HEMT kanale, kai jo darbo taškas yra sąlygotas išorinių grandinių. Teoriniai modeliavimai rodo, kad taikant EOA metodą galima lengvai nustatyti dvimatės plazmos bangų nestabilumus.


References / Nuorodos

[1] M. Dyakonov and M. Shur, Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current, Phys. Rev. Lett. 71(15), 2465–2468 (1993),
http://dx.doi.org/10.1103/PhysRevLett.71.2465
[2] J. Lusakowski, W. Knap, N. Dyakonova, L. Varani, J. Mateos, T. Gonzalez, Y. Roelens, S. Bollaert, A. Cappy, and K. Karpierz, Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor, J. Appl. Phys. 97, 064307 (2005),
http://dx.doi.org/10.1063/1.1861140
[3] A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M.A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, AlGaN/GaN high electron mobility transistors as a voltage tunable room temperature terahertz sources, J. Appl. Phys. 107, 024504 (2010),
http://dx.doi.org/10.1063/1.3291101
[4] J.-F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. González, S. Perez, and D. Pardo, A Monte Carlo investigation of plasmonic noise in nanometric n-In0.53Ga0.47As channels, J. Stat. Mech. Theor. Exp. 01, P01040 (2009),
http://dx.doi.org/10.1088/1742-5468/2009/01/P01040
[5] P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, G. Sabatini, H. Marinchio, and L. Reggiani, Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels, J. Stat. Mech. Theor. Exp. 01, P01047 (2009),
http://dx.doi.org/10.1088/1742-5468/2009/01/P01047
[6] P. Nouvel, H. Marinchio, J. Torres, C. Palermo, D. Gasquet, L. Chusseau, L. Varani, P. Shiktorov, E. Starikov, and V. Gružinskis, Terahertz spectroscopy of plasma waves in high electron mobility transistors, J. Appl. Phys. 106, 013717 (2009),
http://dx.doi.org/10.1063/1.3159032
[7] C. Kübler, R. Huber, and A. Leitenstorfer, Ultrabroadband terahertz pulses: generation and field-resolved detection, Semicond. Sci. Technol. 20, S128–S133 (2005),
http://dx.doi.org/10.1088/0268-1242/20/7/002
[8] S. Boubanga-Tombet, F. Teppe, J. Torres, A. El Moutaouakil, D. Coquillat, N. Dyakonova, C. Consejo, P. Arcade, P. Nouvel, H. Marinchio, T. Laurent, C. Palermo, A. Penarier, T. Otsuji, L. Varani, and W. Knap, Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors, Appl. Phys. Lett. 97, 262108 (2010),
http://dx.doi.org/10.1063/1.3529464
[9] M. Abe, S. Madhavi, Y. Shimada, Y. Otsuka, K. Hirakawa, and K. Tomizawa, Transient carrier velocities in bulk GaAs: Quantitative comparison between terahertz data and ensemble Monte Carlo calculations, Appl. Phys. Lett. 81(4), 679–681 (2002),
http://dx.doi.org/10.1063/1.1495540
[10] S. Asmontas, P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, G. Sabatini, H. Marinchio, J. Torres, Plasma waves induced by the optical beating in HEMT channels as an expected source of TeraHertz radiation generation, AIP Conf. Proc. 1199, 211–212 (2010),
http://dx.doi.org/10.1063/1.3295373