[PDF]    http://dx.doi.org/10.3952/lithjphys.54115

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 54, 6366 (2014)


GATE LENGTH IMPACT ON PLASMA OSCILLATIONS DUE TO HOMOJUNCTIONS IN InGaAs FET/HEMT STRUCTURES
P. Shiktorov, E. Starikov, and V. Gružinskis
Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
E-mail: jane@pav.pfi.lt

Received 18 November 2013; accepted 4 December 2013

Theoretical investigation of the influence of gate length on the hybrid plasma frequencies caused by the presence of homojunctions is performed by means of hydrodynamic simulations. It is shown that when a homojunction approaches the gated channel region boundaries, a qualitative change of the spectrum of plasma excitations both in ungated and gated regions of the channel takes place. These changes can modify significantly the high-frequency regions of spectra of both admittance/impedance and current/voltage noise at the structure terminals.
Keywords: FET/HEMT structures, terahertz radiation, plasma waves, hybrid resonances
PACS: 72.20.Ht, 72.30.+q


UŽTŪROS ILGIO ĮTAKA VIENALYČIŲ SANDŪRŲ SUKELTIEMS PLAZMOS VIRPESIAMS InGaAs FET/HEMT DARINIUOSE
P. Shiktorov, E. Starikov, V. Gružinskis
Fizinių ir technologojos mokslų centro Puslaidininkių fizikos institutas, Vilnius, Lietuva

Hidrodinaminiu modeliavimu teoriškai išnagrinėta užtūros įtaka plazminių virpesių hibridiniam rezonansui FET/HEMT darinių homosandūrose. Skaitmeniniai rezultatai parodė plazminio sužadinimo spektrų kokybinius skirtumus kanalo dalyje po užtūra ir likusiose kanalo dalyse, kai homosandūros artėja prie kanalo po užtūra kraštų. Šie pokyčiai gali stipriai pakeisti darinio admitanso / impedanso ir srovės / įtampos triukšmo spektrų aukšto dažnio sritis.

References / Nuorodos

[1] P. Shiktorov, E. Starikov, V. Gružinskis, L. Reggiani, L. Varani, and J.C. Vaissière, Analytical model of high-frequency noise spectrum in Schottky-barrier diodes, IEEE Electron Device Lett. 26(1), 2–4 (2005),
http://dx.doi.org/10.1109/LED.2004.840396
 
[2] P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, G. Sabatini, H. Marinchio, and L. Reggiani, Problems of noise modeling in the presence of total current branching in HEMTs and FETs channels, J. Stat. Mech. Theor. Exp. (01), P01047 (2009),
http://dx.doi.org/10.1088/1742-5468/2009/01/P01047
 
[3] J. Mateous, T. Gonzalez, D. Pardo, V. Hoel, H. Happy, and A. Cappy, Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMT's, IEEE Trans. Electron Devices 47(1), 250–253 (2000),
http://dx.doi.org/10.1109/16.817592
 
[4] E. Starikov, P. Shiktorov, and V. Gružinskis, Investigation of high-frequency small-signal characteristics of FETs/HEMTs, Semicond. Sci. Technol. 27, 045008 (2012),
http://dx.doi.org/10.1088/0268-1242/27/4/045008
 
[5] H. Nyquist, Thermal agitation of electric charge in conductors, Phys. Rev. 32, 110–113 (1928),
http://dx.doi.org/10.1103/PhysRev.32.110
 
[6] P. Shiktorov, E. Starikov, V. Gružinskis, T. Gonzalez, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J.C. Vaissière, Langevin forces and generalized transfer fields for noise modeling in deep submicron devices, IEEE Trans. Electron Devices 47(10), 1992–1998 (2000),
http://dx.doi.org/10.1109/16.870587
 
[7] M. Dyakonov and M. Shur, Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current, Phys. Rev. Lett. 71(15), 2465–2468 (1993),
http://dx.doi.org/10.1103/PhysRevLett.71.2465