Lithuanian Journal of Physics article / Lietuvos fizikos žurnalo straipsnis

SIMULATION OF Si AND GaAs SUBMICRON TRAPATT DIODES
J. Vyšniauskas and J. Matukas
Faculty of Physics, Vilnius University, Saulėtekio 9, LT-10222 Vilnius, Lithuania
E-mails: juozas.vysniauskas@ff.vu.lt; jonas.matukas@ff.vu.lt

Received 12 February 2014; revised 27 March 2014; accepted 29 May 2014

Plasma formation and extraction processes in submicron silicon N⁺NP⁺, GaAs N⁺NP⁺, and GaAs NM Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The simulation of GaAs TRAPATT diodes was done for the first time. The quasi-hydrodynamic model was chosen for the simulation of the processes. The Synopsys TCAD Sentaurus Software Package was used. The carrier mobility dependence on phonon scattering, impurity scattering, carrier-carrier scattering, intervalley scattering (for GaAs), and mobility saturation in high electric field was taken into account. Several generation-recombination mechanisms were included: impact ionization, Shockley–Read–Hall recombination (SRH) with doping-dependent lifetimes, trap-assisted tunneling, band-to-band tunneling, Auger recombination, and radiative recombination (for GaAs). We show that the so-called critical current density for plasma formation in the submicron diodes increases with the active layer thickness decrease and almost does not depend on the doping density in the active layer. The critical current density for silicon diodes is about two times lower than for the GaAs diodes. The intensive minority carrier storage in the N⁺ and P⁺ regions has a high influence on the voltage oscillation amplitude and frequency after the first plasma formation and extraction period. Oscillation damping takes place in the N⁺NP⁺ GaAs diode with the active layer thickness of less than 0.3 µm.

Keywords: simulation, avalanche diodes, mobility, minority carrier storage
PACS: 85.30.Mn

Si IR GaAs SUBMIKRONINIŲ TRAPATT DIODŲ MODELIAVIMAS

J. Vyšniauskas, J. Matukas
Fizikos fakultetas, Vilniaus Universitetas, Vilnius, Lietuva

Darbe pateikti plazmos susidarymo ir išsiurbimo procesų submikroniniuose silicio N⁺NP⁺, GaAs N⁺NP⁺ ir GaAs NM Šotkio TRAPATT (TRApped Plasma Avalanche Triggered Transit) dioduose modeliavimo rezultatai. GaAs TRAPATT diodai buvo modeliuoti pirmą kartą. Procesų modeliavimui buvo pasirinktas kvazi-hidrodinaminis modelis. Buvo naudojamas Synopsys TCAD Sentaurus programų paketas. Buvo įvertinta krūvininkų judrio priklausomybė nuo sklaidos fononais, priemaišinės sklaidos, krūvininkų-krūvininkų sklaidos, tarpslėninės sklaidos galio arsenide, taip pat įvertintas judrio įsisotinimas stipriame elektriniame lauke. Buvo įskaityta keletas generacijos-rekombinacijos mechanizmų: smūginė jonizacija, Šoklio-Rido-Holo rekombinacija (SRH) su priklausančia nuo priemaišų krūvininkų gyvavimo trukme, tuneliavimas per gaudykles, tuneliavimas zona-zona, Ožė rekombinacija, spinduliuojamoji rekombinacija galio arsenide. Parodyta, kad plazmos formavimosi krizinės srovės tankis submikroniniuose dioduose didėja, mažinant aktyviojo sluoksnio storį, ir beveik nepriklauso nuo priemaišų tankio tame sluoksnyje. Silicio diodų krizinės srovės tankis apie du kartus mažesnis, negu galio arsenido diodų. Intensyvus šalutinių krūvininkų kaupimas N⁺ ir P⁺ srityse stipriai įtakoja įtampos virpesių amplitudę ir dažnį po pirmojo plazmos susidarymo ir išsiurbimo periodo. Virpesiai slopsta N⁺NP⁺ GaAs dioduose su aktyviosios srities storiu, mažesniu už 0,3 µm.

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