Keywords: III–V material, high speed electronics, ion implanted InGaAs, metal–semiconductor–metal devices, optoelectronic autocorrelation, radio-over-fibre telecommunications, ultrafast photoconductor
PACS: 85.60.Bt, 85.60.Gz, 84.40.Ua

Grenoblio universitetas, Grenoblis, Prancūzija

References / Nuorodos

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