Vilius Palenskis, Juozas Vyšniauskas, Justinas Glemža, and
Jonas Matukas
Received 6 December 2017; revised 26 January 2018; accepted 21
June 2018
It is shown that the free charge carrier
capture–emission process causes both the charge carrier
density and mobility fluctuations. In this report we present
the calculation results in order to find how the
capture–emission process affects the free charge carrier
mobility and mobility fluctuations. The carrier mobility
dependence on phonon, impurity and carrier–carrier
scatterings, and the mobility dependence on the electric field
and the energy gap variation due to the doping level were
taken into account. It is also shown that fluctuations of the
charge carrier density and mobility due to the
capture–emission process are completely correlated, and that
their relaxation times are the same as for the charge
capture–emission process. The general expression for
estimation of active capture centre density in the volume of a
homogeneous sample from the low-frequency noise measurements
is presented.
Keywords: low-frequency
noise, charge carrier number and mobility fluctuations, defects,
RTS, Lorentzian spectrum
PACS: 05.40.Ca,
07.50.Hp, 71.55.-i, 72.70+m
References
/
Nuorodos
[1] M.J. Kirton and M.J. Uren, Noise in solid-state
microstructures: A new perspective on individual defects,
interface states and low-frequency (1/
f) noise, Adv.
Phys.
38, 367–468 (1989),
https://doi.org/10.1080/00018738900101122
[2] A.L. McWhorter, 1/
f noise and germanium surface
properties, in:
Semiconductor Surface Physics, ed. R.H.
Kingston (University of Pennsylvania Press, 1957) pp. 207–228,
http://www.upenn.edu/pennpress/book/1026.html
[3] M.B. Weissman, 1/
f noise and other slow,
nonexponential kinetics in condensed matter, Rev. Mod. Phys.
60,
537–571 (1988),
https://doi.org/10.1103/RevModPhys.60.537
[4] M.S. Kogan,
Electronic Noise and Fluctuations in Solids
(Cambridge University Press, New York, 1996),
https://doi.org/10.1017/CBO9780511551666
[5] B. Pelegrini, One model of flicker, burst, and
generation-recombination noises, Phys. Rev. B
24,
7071–7083 (1981),
https://doi.org/10.1103/PhysRevB.24.7071
[6] V. Palenskis, Flicker noise problem (review), Lith. J. Phys.
30, 107–152 (1990)
[7] B.K. Jones, Electrical noise as a measure of quality and
reliability in electronic devices, Adv. Electron. Electron Phys.
87, 201–257 (1993),
https://doi.org/10.1016/S0065-2539(08)60017-7
[8] F.N. Hooge, Discussion of resent experiment on 1/
f
noise, Physica
60, 130–144 (1972),
https://doi.org/10.1016/0031-8914(72)90226-1
[9] F.H. Hooge, T.G.M. Kleinpenning, and L.K.J. Vandamme,
Experimental studies on 1/
f noise, Rep. Progr. Phys.
44,
479–532 (1981),
https://doi.org/10.1088/0034-4885/44/5/001
[10] F.H. Hooge and L.K.J. Vandamme, Lattice scattering causes
1/
f noise, Phys. Lett. A
66, 315–316 (1978),
https://doi.org/10.1016/0375-9601(78)90249-9
[11] F.N. Hooge, 1/
f noise sources, IEEE Trans. Electron
Devices
41, 1926–1935 (1994),
https://doi.org/10.1109/16.333808
[12] L.K.J. Vandamme and F.H. Hooge, What do we certainly know
about 1/
f noise in MOSTs? IEEE Trans. Electron Devices
55,
3070–3085 (2008),
https://doi.org/10.1109/TED.2008.2005167
[13] F.H. Hooge, 1/
f noise in semiconductors. Has
anything been proved experimentally? In:
Proceedings of the
7th Vilnius Conference on Fluctuation Phenomena in Physical
Systems, ed. by V. Palenskis (VU Press, Vilnius, 1994) pp.
61–69
[14] F.H. Hooge, 1/
f noise in semiconductor materials,
in:
Proceedings of the 13th International Conference on
Noise in Physical Systems and 1/f Fluctuations, eds. V.
Bareikis and R. Katilius (World Scientific, Singapore, 1995) pp.
8–13,
https://doi.org/10.1142/9789814532693
[15] V. Palenskis and K. Maknys, Nature of low-frequency noise
in homogeneous semiconductors, Sci. Rept.
5, 18305
(2015),
https://doi.org/10.1038/srep18305
[16] V. Palenskis, The charge carrier capture–emission process –
the main source of the low-frequency noise inhomogeneous
semiconductors, Lith. J. Phys.
56, 200–206 (2016),
https://doi.org/10.3952/physics.v56i4.3416
[17] G. Masetti, M. Severi, and S. Solmi, Modeling of carrier
mobility against carrier concentration in arsenic-, phosphorus-,
and boron-doped silicon, IEEE Trans. Electron Devices
30(7),
764–769 (1983),
https://doi.org/10.1109/T-ED.1983.21207
[18] A. Schenk,
Advanced Physical Models for Silicon Device
Simulation (Springer, Wien, 1998),
https://doi.org/10.1007/978-3-7091-6494-5
[19] C. Canali, G. Majni, R. Minder, and G. Ottaviani, Electron
and hole drift velocity measurements in silicon and their
empirical relation to electric field and temperature, IEEE
Trans. Electron Devices
22(11), 1045–1047 (1975),
https://doi.org/10.1109/T-ED.1975.18267
[20] D.B.M. Klaassen, J.W. Slotboom, and H.C. de Graaff, Unified
apparent bandgap narrowing in
n- and
p-type
silicon, Solid State Electron.
35(2), 125–129 (1992),
https://doi.org/10.1016/0038-1101(92)90051-D
[21] C. Jacoboni, C. Canali, G. Ottaviani, and A. Alberigi
Quaranta, A review of some charge transport properties of
silicon, Solid State Electron.
20, 77–89 (1977),
https://doi.org/10.1016/0038-1101(77)90054-5