[PDF]     https://doi.org/10.3952/physics.2025.65.4.3

Open access article / Atviros prieigos straipsnis
 
Lith. J. Phys. 65, 203–211 (2025)
 

GaAsBi STRUCTURES FOR ULTRAFAST OPTOELECTRONICS GROWN AT DIFFERENT Bi FLUXES
 Simonas Driukasa, Vaidas Pačebutasa, Sandra Stanionytėb, Bronislovas Čechavičiusa, Andrius Bičiūnasa, and Gintaras Valušisc
aDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio 3, 10257 Vilnius, Lithuania
bDepartment of Characterization of Materials Structure, Center for Physical Sciences and Technology, Saulėtekio 3, 10257 Vilnius, Lithuania
cInstitute of Photonics and Nanotechnology, Faculty of Physics, Vilnius University, Saulėtekio 3, 10257 Vilnius, Lithuania
Email: simonas.driukas@ftmc.lt

Received 10 December 2025; accepted 12 December 2025

GaAsBi is an attractive semiconductor material for the development of infrared optoelectronics devices due to possibilities of band engineering when, varying the Bi content, one can induce a rapid rising of the valence band edge. Although this property makes GaAsBi a promising material for terahertz (THz) emitters, telecommunication lasers, and low noise photodetectors, the yield of the developed GaAsBi-based devices is still low indicating a requirement for the better quality of the material. In this work, we extend previous studies focusing on the investigation of the influence of Bi flux during the molecular beam epitaxy growth. The structures were characterized using high-resolution X-ray diffraction, photoluminescence and optical pump–THz probe technique. It is shown that multiple growth runs targeting at the ~6% Bi content and near-infrared operation wavelength of around 1.2 μm yielded consistent structural and optical properties, indicating that the optimal and repeatable growth protocol has been successfully established. The observed red-shifts in photoluminescence spectra and the bi-exponential decay in carrier relaxation can be associated with the existence of band-tail states and random potential due to fluctuations in the distribution of Bi content.
Keywords: GaAsBi, high-resolution X-ray diffraction, photoluminescence, optical pump–THz probe


GaAsBi DARINIAI ITIN SPARČIAI OPTOELEKTRONIKAI, IŠAUGINTI ESANT SKIRTINGIEMS Bi SRAUTAMS
Simonas Driukasa, Vaidas Pačebutasa, Sandra Stanionytėb, Bronislovas Čechavičiusa, Andrius Bičiūnasa, Gintaras Valušisc
aFizinių ir technologijos mokslų centro Optoelektronikos skyrius, Vilnius, Lietuva
bFizinių ir technologijos mokslų centro Medžiagų struktūrinės analizės skyrius, Vilnius, Lietuva
cVilniaus universiteto Fizikos fakulteto Fotonikos ir nanotechnologijų institutas, Vilnius, Lietuva
 
GaAsBi yra patraukli puslaidininkinė medžiaga infraraudonųjų spindulių optoelektronikos įtaisams kurti dėl juostų inžinerijos galimybių, o keičiant Bi kiekį galima efektyviai susiaurinti draustinės juostos tarpą. Nors ši savybė daro GaAsBi perspektyvia medžiaga terahercų (THz) spinduliuotės šaltiniams, telekomunikacijų lazeriams ir mažo triukšmo fotodetektoriams, iki šiol sukurtų GaAsBi pagrindu pagamintų įtaisų našumas išlieka nedidelis, o tai rodo geresnės medžiagos kokybės poreikį. Šiame darbe tęsiami ankstesni tyrimai, daugiausia dėmesio skiriant Bi srauto įtakai molekulinių pluoštų epitaksijos augimo metu. Dariniai buvo charakterizuoti naudojant rentgeno spindulių difrakcijos, fotoliuminescencijos ir optinio žadinimo–THz zondavimo metodus. Bismuto koncentracija bandiniuose buvo keičiama nuo 4,5 iki 8,5 %, siekiant nustatyti optimalias sluoksnių auginimo sąlygas ir įvertinti Bi įterpimo įtaką medžiagos kokybei.
Optinio žadinimo–THz zondavimo matavimai parodė, kad egzistuoja du krūvininkų relaksacijos sandai: greitasis (dešimtys ps) ir lėtesnis (0,5–0,95 ns). Manoma, kad greitasis sandas susijęs su padidėjusiu rekombinacijos centrų skaičiumi, o lėtasis – su galimu fliuktuacinio potencialo formavimusi.
Parodyta, kad daugkartiniai auginimai, orientuoti į ~6 % Bi kiekį darinyje ir maždaug 1,2 μm artimojo infraraudonojo spinduliavimo veikimo bangos ilgį, leidžia užauginti darinius, turinčius stabilią struktūrą ir norimas optines savybes bei trumpus, ps trukmės, gyvavimo laikus.


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