Received 2 November 2025; revised 13 June 2026; accepted 16 June
2026
References /
Nuorodos
[1] S. Adachi,
Handbook on Physical Properties of
Semiconductors, Vol. 3, 3rd ed. (Springer, US, 2004)
[2] L. Hannachi and N. Bouarissa, Electronic structure and
optical properties of CdSe
xTe
1-x
mixed crystals, Superlattices Microstruct.
44(6),
794–801 (2008),
https://doi.org/10.1016/j.spmi.2008.09.013
[3] A. Gueddim, S. Zerroug, and N. Bouarissa, Optical
characteristics of ZnTe
1-xO
x
alloys from first-principles calculations, J. Lumin.
135,
243–247 (2013),
https://doi.org/10.1016/j.jlumin.2012.10.004
[4] D. J. Smith, Atomic-scale characterization of II–VI compound
semiconductors, J. Electron. Mater.
42, 3168–3174
(2013),
https://doi.org/10.1007/s11664-013-2701-1
[5] V. Tomashyk, P. Feychuk, and L. Shcherbak, Ternary Alloys
Based on II–VI Semiconductor Compounds (CRC Press Taylor &
Francis Group, Boca Raton, 2014),
https://doi.org/10.1201/b15302
[6] M. Isshiki and J. Wang, in:
Springer Handbook of
Electronic and Photonic Materials, eds. S. Kasap and P.
Capper (Springer, Cham, 2007) pp. 1–18
[7] K. Kassali and N. Bouarissa, Composition and temperature
dependence of electron band structure in ZnSe
1-xS
x,
Mater. Chem. Phys.
76(3), 255–261 (2002),
https://doi.org/10.1016/S0254-0584(01)00546-6
[8] H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R.
Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity,
and B.K. Meyer, Anionic and cationic substitution in ZnO, Prog.
Solid State Chem.
37(2–3), 153–172 (2009),
https://doi.org/10.1016/j.progsolidstchem.2009.11.008
[9] Ü. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S.
Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, A comprehensive
review of ZnO materials and devices, J. Appl. Phys.
98,
041301 (2005),
https://doi.org/10.1063/1.1992666
[10] B. Bieniek,
Ultra Thin ZnO on Metal Substrates: An ab
initio
Study, Ph.D Thesis (Technische Universitaet
Berlin, Germany, 2016)
[11] S. Saib and N. Bouarissa, Structural parameters and
transition pressures of ZnO: ab‐initio calculations, Phys.
Status Solidi B
244(3), 1063–1069 (2007),
https://doi.org/10.1002/pssb.200642441
[12] T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand,
Zener model description of ferromagnetism in zinc-blende
magnetic semiconductors, Science
287(5455), 1019–1022
(2000),
https://doi.org/10.1126/science.287.5455.1019
[13] B.U. Haq, R. Ahmed, A. Afaq, A. Shaari, and M. Zarshenas,
Structural and electronic properties of Ni-doped ZnO in
zinc-blende phase: A DFT investigations, AIP Conf. Proc.
1482,
54–57 (2012),
https://doi.org/10.1063/1.4757437
[14] B.B. Li, X.Q. Xiu, R. Zhang, Z.K. Tao, L. Chen, Z.L. Xie,
and Z. Xie, Study of structure and magnetic properties of
Ni-doped ZnO-based DMSs, Mater. Sci. Semicond. Process.
9(1–3),
141–145 (2006),
https://doi.org/10.1016/j.mssp.2006.01.074
[15] T. Dietl, H. Ohno, and F. Matsukura, Hole-mediated
ferromagnetism in tetrahedrally coordinated semiconductors,
Phys. Rev. B
63(19), 195205 (2001),
https://doi.org/10.1103/PhysRevB.63.195205
[16] A. Dinia, J.P. Ayoub, G. Schmerber, E. Beaurepaire, D.
Muller, and J.J. Grob, Effect of ion irradiation on the
structural and the magnetic properties of Zn
0.75Co
0.25O
magnetic semiconductors, Phys. Lett. A
333(1–2), 152–156
(2004),
https://doi.org/10.1016/j.physleta.2004.10.027
[17] T. Wakano, N. Fujimura, Y. Morinaga, N. Abe, A. Ashida, and
T. Ito, Magnetic and magnetotransport properties of ZnO: Ni
films, Physica E
10(1–3), 260–264 (2001),
https://doi.org/10.1016/S1386-9477(01)00095-9
[18] S.W. Jung, W.I. Park, G.C. Yi, and M.Y. Kim, Fabrication
and controlled magnetic properties of Ni/ZnO nanorod
heterostructures, Adv. Mater.
15(16), 1358–1361 (2003),
https://doi.org/10.1002/adma.200305172
[19] J.B. Cui and U.J. Gibson, Electrodeposition and room
temperature ferromagnetic anisotropy of Co and Ni-doped ZnO
nanowire arrays, Appl. Phys. Lett.
87(13), 133108
(2005),
https://doi.org/10.1063/1.2058222
[20] M. Venkatesan, C.B. Fitzgerald, J.G. Lunney, and J.M.D.
Coey, Anisotropic ferromagnetism in substituted zinc oxide,
Phys. Rev. Lett.
93(17), 177206 (2004),
https://doi.org/10.1103/PhysRevLett.93.177206
[21] B.B. Li, X.Q. Xiu, R. Zhang, Z.K. Tao, L. Chen, Z.L. Xie,
and Z. Xie, Study of structure and magnetic properties of
Ni-doped ZnO-based DMSs, Mater. Sci. Semicond. Process.
9(1–3),
141–145 (2006),
https://doi.org/10.1016/j.mssp.2006.01.074
[22] D.L. Hou, R.B. Zhao, Y.Y. Wei, C.M. Zhen, C.F. Pan, and
G.D. Tang, Room temperature ferromagnetism in Ni-doped ZnO
films, Curr. Appl. Phys.
10(1), 124–128 (2010),
https://doi.org/10.1016/j.cap.2009.05.007
[23] B. Pandey, S. Ghosh, P. Srivastava, D.K. Avasthi, D.
Kabiraj, and J.C. Pivin, Synthesis and characterization of
Ni-doped ZnO: A transparent magnetic semiconductor, J. Magn.
Magn. Mater.
320(24), 3347–3351 (2008),
https://doi.org/10.1016/j.jmmm.2008.07.018
[24] C.J. Cong, J.H. Hong, Q.Y. Liu, L. Liao, and K.L. Zhang,
Synthesis, structure and ferromagnetic properties of Ni-doped
ZnO nanoparticles, Solid State Commun.
138(10–11),
511–515 (2006),
https://doi.org/10.1016/j.ssc.2006.04.020
[25] G. Pei, C. Xia, S. Cao, J. Zhang, F. Wu, and J. Xu,
Synthesis and magnetic properties of Ni-doped zinc oxide
powders, J. Magn. Magn. Mater.
302(2), 340–342 (2006),
https://doi.org/10.1016/j.jmmm.2005.09.029
[26] T. Li, H. Qiu, P. Wu, M. Wang, and R. Ma, Characteristics
of Ni-doped ZnO: Al films grown on glass by direct current
magnetron co-sputtering, Thin Solid Films
515(7–8),
3905–3909 (2007),
https://doi.org/10.1016/j.tsf.2006.11.019
[27] G. Gu, G. Xiang, J. Luo, H. Ren, M. Lan, D. He, and X.
Zhang, Magnetism in transition-metal-doped ZnO: A
first-principles study, J. Appl. Phys.
112(2), 023913
(2012),
https://doi.org/10.1063/1.4739450
[28] Z. Jin, T. Fukumura, M. Kawasaki, K. Ando, H. Saito, T.
Sekiguchi, and H. Koinuma, High throughput fabrication of
transition-metal-doped epitaxial ZnO thin films: A series of
oxide-diluted magnetic semiconductors and their properties,
Appl. Phys. Lett.
78(24), 3824–3826 (2001),
https://doi.org/10.1063/1.1377856
[29] Z. Yin, N. Chen, F. Yang, S. Song, C. Chai, J. Zhong, and
K. Ibrahim, Structural, magnetic properties and photoemission
study of Ni-doped ZnO, Solid State Commun.
135(7),
430–433 (2005),
https://doi.org/10.1016/j.ssc.2005.05.024
[30] G. Pei, C. Xia, B. Wu, T. Wang, L. Zhang, Y. Dong, and J.
Xu, Studies of magnetic interactions in Ni-doped ZnO from
first-principles calculations, Comput. Mater. Sci.
43(3),
489–494 (2008),
https://doi.org/10.1016/j.commatsci.2007.12.012
[31] B.B. Straumal, A.A. Myatiev, P.B. Straumal, A.A. Mazilkin,
S.G. Protasova, E. Goering, and B. Baretzky, Grain boundary
layers in nanocrystalline ferromagnetic zinc oxide, JETP Lett.
92(6), 396–400 (2010),
https://doi.org/10.1134/S0021364010180074
[32] P. Hohenberg and W. Kohn, Inhomogeneous electron gas, Phys.
Rev.
136(3B), B864–B871 (1964),
https://doi.org/10.1103/PhysRev.136.B864
[33] W. Kohn and L.J. Sham, Self-consistent equations including
exchange and correlation effects, Phys. Rev.
140(4A),
A1133–A1138 (1965),
https://doi.org/10.1103/PhysRev.140.A1133
[34] P. Blaha, K. Schwarz, G.K.H. Madsen, D. Kvasnicka, and J.
Luitz,
WIEN2k, An Augmented Plane Wave + Local Orbitals
Program for Calculating Crystal Properties (Karlheinz
Schwarz, Techn. Universität Wien, Austria, 2008)
[35] F. Tran and P. Blaha, Accurate band gaps of semiconductors
and insulators with a semilocal exchange-correlation potential,
Phys. Rev. Lett.
102(22), 226401 (2009),
https://doi.org/10.1103/PhysRevLett.102.226401
[36] H.J. Monkhorst and J.D. Pack, Special points for
Brillouin-zone integrations, Phys. Rev. B
13(12),
5188–5192 (1976),
https://doi.org/10.1103/PhysRevB.13.5188
[37] J.D. Pack and H.J. Monkhorst, 'Special points for
Brillouin-zone integrations' – A reply, Phys. Rev. B
16(4),
1748–1749 (1977),
https://doi.org/10.1103/PhysRevB.16.1748
[38] F. Birch, Finite elastic strain of cubic crystals, J.
Geophys. Res.
57, 227 (1952),
https://doi.org/10.1029/JZ057i002p00227
[39] Z. Wu and R.E. Cohen, More accurate generalized gradient
approximation for solids, Phys. Rev. B
73(23), 235116
(2006),
https://doi.org/10.1103/PhysRevB.73.235116
[40] B. U. Haq, A. Afaq, R. Ahmed, and S. Naseem, Structural,
electronic, and magnetic properties of Co-doped ZnO, Chin. Phys.
B
21(9), 097101 (2012),
https://doi.org/10.1088/1674-1056/21/9/097101
[41] B.U. Haq, R. Ahmed, G. Abdellatif, A. Shaari, F.K. Butt,
M.B. Kanoun, and S. Goumri-Said, Dominant ferromagnetic coupling
over antiferromagnetic in Ni doped ZnO: First-principles
calculations, Front. Phys.
11, 1–7 (2016),
https://doi.org/10.1007/s11467-015-0542-5
[42] Ü. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S.
Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, A comprehensive
review of ZnO materials and devices, J. Appl. Phys.
98,
041301 (2005),
https://doi.org/10.1063/1.1992666
[43] H. Benzerouk, F. Chouit, M. Mekhnache, L.S. Hamideche, and
A. Drici, An experimental and theoretical study of nickel oxide
(NiO) using the spraying method (CSP) and DFT calculations,
Mater. Sci. Eng. B
303, 117323 (2024),
https://doi.org/10.1016/j.mseb.2024.117323
[44] S. Adachi,
Properties of Group-IV, III–V, and II–VI
Semiconductors (Wiley, Chichester, 2005),
https://doi.org/10.1002/0470090340
[45] L. Vegard, The constitution of the mixed crystals and the
filling of space of the atoms, Z. Phys.
5, 17–26 (1921),
https://doi.org/10.1007/BF01349680
[46] J. P. Dismukes, L. Ekstrom, and R.J. Paff, Lattice
parameter and density in germanium–silicon alloys, J. Phys.
Chem.
68(10), 3021–3027 (1964),
https://doi.org/10.1021/j100792a049
[47] M. Laradji, D.P. Landau, and B. Dünweg, Structural
properties of Si
1-xGe
x
alloys: A Monte Carlo simulation with the Stillinger-Weber
potential, Phys. Rev. B
51(8), 4894–4904 (1995),
https://doi.org/10.1103/PhysRevB.51.4894
[48] N. Bouarissa, Positron states in Si
1-xGe
x
alloys: deviation from Vegard's Law, Mod. Phys. Lett. B
16(08),
275–283 (2002),
https://doi.org/10.1142/S0217984902003750
[49] Z. Charifi and N. Bouarissa, The effect of the violation of
Vegard's law on the optical bowing in Si
1-xGe
x
alloys, Phys. Lett. A
234(6), 493–497 (1997),
https://doi.org/10.1016/S0375-9601(97)00575-6
[50] B. Jobst, D. Hommel, U. Lunz, T. Gerhard, and G. Landwehr,
E0 band‐gap energy and lattice constant of ternary Zn
1-xMg
xSe
as functions of composition, Appl. Phys. Lett.
69(1),
97–99 (1996),
https://doi.org/10.1063/1.118132
[51] S. Zerroug, A. Gueddim, M.A. Khan, and N. Bouarissa, Ab
initio study of structural parameters and optical properties of
ZnTe
1-xO
x, Superlattices
Microstruct.
53, 155–162 (2013),
https://doi.org/10.1016/j.spmi.2012.09.015
[52] K. Souleh, A. Amor, H. Ledjici, B. Lagoun, M. Boucenna, and
N. Bouarissa, Structural parameters and optical spectra of Zn
1-xCo
xO
ternary alloys with zinc-blende, rocksalt and wurtzite phases,
Optik
224, 165732 (2020),
https://doi.org/10.1016/j.ijleo.2020.165732
[53] S. Zerroug, F. Ali Sahraoui, and N. Bouarissa,
Ab
initio calculations of yttrium nitride: structural and
electronic properties, Appl. Phys. A
97, 345–350 (2009),
https://doi.org/10.1007/s00339-009-5243-x
[54] F. Benmakhlouf, A. Bechiri, and N. Bouarissa, Zinc-blende
ZnS under pressure: predicted electronic properties, Solid-State
Electron.
47(8), 1335–1338 (2003),
https://doi.org/10.1016/S0038-1101(03)00009-1
[55] K. Kassali and N. Bouarissa, Effect of nitrogen
concentration on electronic energy bands of Ga
1-xIn
xN
yAs
1-y
alloys, Microelectron. Eng.
54(3–4), 277–286 (2000),
https://doi.org/10.1016/S0167-9317(00)00409-3
[56] N. Bouarissa, Electron and positron energy levels and
deformation potentials in group‐III nitrides, Phys. Status
Solidi B
231(2), 391–402 (2002),
https://doi.org/10.1002/1521-3951(200206)231:2<391::AID-PSSB391>3.0.CO;2-J
[57] K. Souleh, T. Smain, H. Lidjici, B. Lagoun, M. Boucenna,
and N. Bouarissa, Electronic structure and magnetization of Zn
1-xCo
xO
ternary alloys with zinc-blende, rocksalt and wurtzite phases,
Opt. Quantum Electron.
53(8), 432 (2021),
https://doi.org/10.1007/s11082-021-02985-x
[58] S.K. Neogi, R. Karmakar, A.K. Misra, A. Banerjee, D. Das,
and S. Bandyopadhyay, Physical properties of antiferromagnetic
Mn doped ZnO samples: Role of impurity phase, J. Magn. Magn.
Mater.
346, 130–137 (2013),
https://doi.org/10.1016/j.jmmm.2013.07.029
[59] H. Algarni, A. Gueddim, N. Bouarissa, M.A. Khan, and H.
Ziani, Crystal structure and electronic properties of wurtzite
Mg
xZn
1-xO:
Ab initio
study, Results Phys.
15, 102694 (2019),
https://doi.org/10.1016/j.rinp.2019.102694
[60] S. Zerroug, F. Ali Sahraoui, and N. Bouarissa, Structural
parameters and pressure coefficients for CdS
xTe
1-x:
FP-LAPW calculations, Eur. Phys. J. B
57, 9–14 (2007),
https://doi.org/10.1140/epjb/e2007-00157-8
[61] J.P. Walter and M.L. Cohen, Electronic charge densities in
semiconductors, Phys. Rev. Lett.
26(1), 17–20 (1971),
https://doi.org/10.1103/PhysRevLett.26.17
[62] N. Bouarissa, Electron valence charge densities in Hg
1-xCd
xTe
mixed crystals, Infrared Phys. Technol.
39(5), 265–270
(1998),
https://doi.org/10.1016/S1350-4495(98)00012-7
[63] S.L. Richardson, M.L. Cohen, S.G. Louie, and J.R.
Chelikowsky, Electron charge densities at conduction-band edges
of semiconductors, Phys. Rev. B
33(2), 1177–1180 (1986),
https://doi.org/10.1103/PhysRevB.33.1177
[64] N. Bouarissa and F. Annane, Electronic properties and
elastic constants of the ordered Ge
1-xSn
x
alloys, Mater. Sci. Eng. B
95(2), 100–106 (2002),
https://doi.org/10.1016/S0921-5107(02)00203-9
[65] M.A. Khan and N. Bouarissa, Optical and energy-loss spectra
of ZnS from
ab initio molecular dynamics simulation:
temperature effect, Optik
124(21), 5095–5098 (2013),
https://doi.org/10.1016/j.ijleo.2013.03.035
[66] N. Bouarissa, The effect of hydrostatic pressure on the
electronic and optical properties of InP, Solid State Electron.
44(12), 2193–2198 (2000),
https://doi.org/10.1016/S0038-1101(00)00147-7
[67] S. Adachi,
Properties of Semiconductor Alloys:
Group-IV, III–V and II–VI Semiconductors (John Wiley &
Sons, Chichester, 2009),
https://doi.org/10.1002/9780470744383
[68] K.I. Suzuki and S. Adachi, Optical constants of Cd
xZn
1-xSe
ternary alloys, J. Appl. Phys.
83(2), 1018–1022 (1998),
https://doi.org/10.1063/1.366791
[69] N. Bouarissa, Energy gaps and refractive indices of Al
xGa
1-xAs,
Mater. Chem. Phys.
72(3), 387–394 (2001),
https://doi.org/10.1016/S0254-0584(01)00304-2
[70] M. Boucenna and N. Bouarissa, Refractive index and
dielectric constants of Ga
xIn
1-xP:
Disorder effect, Optik
125(22), 6611–6615 (2014),
https://doi.org/10.1016/j.ijleo.2014.08.112
[71] N.M. Ravindra, P. Ganapathy, and J. Choi, Energy
gap–refractive index relations in semiconductors – An overview,
Infrared Phys. Technol.
50(1), 21–29 (2007),
https://doi.org/10.1016/j.infrared.2006.04.001
[72] N. Bouarissa, Pressure dependence of refractive index,
dielectric constants and optical phonon frequencies of indium
arsenide, Optik
138, 263–268 (2017),
https://doi.org/10.1016/j.ijleo.2017.03.082
[73] P.Y. Yu and M. Cardona,
Fundamentals of Semiconductors,
Physics and Materials Properties (Springer-Verlag, Berlin,
1996)
[74] A. Gueddim, S. Zerroug, and N. Bouarissa, Optical
characteristics of ZnTe
1-xO
x
alloys from first-principles calculations, J. Lumin.
135,
243–247 (2013),
https://doi.org/10.1016/j.jlumin.2012.10.004