[PDF]     http://dx.doi.org/10.3952/lithjphys.51404

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 51, 292–303 (2011)

J. Kundrotas a, A. Čerškus a, V. Nargelienė a, A. Sužiedėlis a, S. Ašmontas a, J. Gradauskas a, A. Johannessen b, and E. Johannessen b
a Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
E-mail: kundrot@pfi.lt
b Vestfold University College, Raveien 197, 3184 Borre, Norway

Received 27 October 2011; accepted 1 December 2011

The enhancement of light emissive processes in different quantum nanometric systems is presented in this review. The plasmonic enhanced photoluminescence (fluorescence) of metals and metal nanoparticles, molecules and semiconductor nanostructures, as well as surface-enhanced Raman scattering is initially considered. The enhancement of excitonic photoluminescence intensity in semiconductor confined systems such as quantum wells, quantum wires and quantum dots, and microcavities are then discussed. Finally, the experimental results of the enhanced exciton photoluminescence from GaAs homojunctions, δ-doped GaAs structures, GaAs/AlGaAs selectively doped and AlInN/GaN heterostuctures is presented. These results can be applied to enhance the emission of light-emitting diodes, as well as to increase the efficiency of solar cells.
Keywords: plasmonics, photoluminescence, fluorescence, SERS, MEF, quantum wells, heterostructures
PACS: 73.20.Mf, 73.21.-b, 78.55.-m, 78.30.-j, 78.67.Bf

J. Kundrotas a, A. Čerškus a, V. Nargelienė a, A. Sužiedėlis a, S. Ašmontas a, J. Gradauskas a, A. Johannessen b, and E. Johannessen b
a Fizinių ir technologijos mokslų centro Puslaidininkių fizikos institutas, Vilnius, Lietuva
b Vestfoldo universitetinis koledžas, Borre, Norvegija

Apžvelgiami šviesos sustiprėjimo reiškiniai įvairiose kvantinėse nanometrinėse sistemose. Pirmiausia pristatomas plazminis fotoliuminescencijos (fluorescencijos) sustiprėjimas metaluose ir metalų nanodalelėse, molekulėse ir puslaidininkiniuose nanodariniuose. Taip pat aptariama paviršiaus sustiprinta Ramano sklaida. Toliau nagrinėjamas eksitoninės spinduliuotės sustiprėjimas apribotuose nanometriniuose dariniuose, tokiuose kaip kvantiniai šuliniai, kvantinės gijos, kvantiniai taškai bei mikrorezonatoriai. Galiausiai pateikiami eksitoninės spinduliuotės sustiprėjimo GaAs vienalytėse sandūrose, GaAs δ-legiruotuose dariniuose bei GaAs/AlGaAs selektyviai legiruotuose įvairiatarpėse sandūrose eksperimentiniai tyrimo rezultatai. Padaryta išvada, kad pastarieji reiškiniai gali būti panaudoti šviestukų ir saulės elementų efektyvumui padidinti.

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