[PDF]    http://dx.doi.org/10.3952/physics.v55i4.3228

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 55, 305314 (2015)

Slyman Karishya, Pierre Ziadéa, Giulio Sabatinib, Hugues Marinchiob, Christophe Palermob, Luca Varanib, Javier Mateosc, and Tomas Gonzalezc
aEcole Doctorale de Sciences et Technologies, Université Libanaise, Fanar, Liban
bInstitut d’Electronique et des Systèmes, CNRS UMR 5214, University of Montpellier, France
E-mail: luca.varani@umontpellier.fr
cDepartment of Applied Physics, University of Salamanca, Spain

Received 29 September 2015; accepted 29 September 2015

A Monte Carlo simulation of electron transport in In0.53Ga0.47As and InAs is performed in order to extract the main kinetic parameters: mean valley population, effective mass, drift velocity, mean energy, ohmic and differential mobility. Most of these quantities are crucial for the development of macroscopic numerical models. Moreover, for some calculated quantities, analytical interpolation equations are given in order to achieve easy implementation in numerical codes. A comparison between our Monte Carlo calculation and several experimental and theoretical calculations is also carried out in order to validate the results.
Keywords: Monte Carlo, transport, InGaAs, InAs
PACS:72.20.Fr, 72.20.Ht, 72.80.Ey


Slyman Karishya, Pierre Ziadéa, Giulio Sabatinib, Hugues Marinchiob, Christophe Palermob, Luca Varanib, Javier Mateosc, Tomas Gonzalezc
aLibano universitetas, Fanaras, Libanas
bMonpeljė universitetas, Prancūzija
cSalamankos universitetas, Ispanija

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