[PDF]    http://dx.doi.org/10.3952/physics.v56i2.3305

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 56, 92–101 (2016)

Pavel Geydta, Prokhor A. Alekseevb, Mikhail S. Dunaevskiyb,c, Tuomas Haggrénd, Joona-Pekko Kakkod, Erkki Lähderantaa, and Harri Lipsanend
aSchool of Engineering Science, Lappeenranta University of Technology, P.O. Box 20, 53851 Lappeenranta, Finland
E-mail: pavel.geydt@gmail.com
bIoffe Physical Technical Institute, Politechnicheskaya 2, 194021 Saint Petersburg, Russia
cNRU ITMO, Kronverkskiy 49, 197101 Saint Petersburg, Russia
dDepartment of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland

Received 8 January 2016; revised 8 March 2016; accepted 21 June 2016

Current–voltage (IV) characteristics of vertical p-GaAs nanowires (NWs) covered by different surface passivation materials were experimentally measured by conductive atomic force microscopy (C-AFM). The obtained IV curves for individual NWs with a diameter of 100 nm covered with AlGaAs, GaN, GaP or InP shell layers were compared to analyse the influence of surface passivation on the density of surface states and choose the most beneficial passivating material for technological applications. We have found the absence of a Schottky barrier between the golden catalytic cap on the top of a NW and the nanowire situated below and covered with an ultrathin GaP passivating layer. It was suggested that passivating material can arrange the heterostructure  configuration with the GaAs NW near the Au cap. The latter mechanism was proposed to explain a strong energy barrier found in nanowires covered with InP passivation. AlGaAs passivation affected the forward threshold voltage of nanowires for NWs, which was measured simultaneously with the resistivity of each individual vertical structure from an array by means of AFM in the regime of measuring the IV curves and onefold calculations. We made an attempt to develop the methodology of measurement and characterization of electric properties of passivated NWs.
Keywords: nanowires, passivation, GaAs, AFM, current–voltage characteristics
PACS: 73.43.Fj, 81.05.Ea, 81.07.Gf


Pavel Geydta, Prokhor A. Alekseevb, Mikhail A. Dunaevskiyb,c, Tuomas Haggrénd, Joona-Pekko Kakkod, Erkki Lähderantaa, Harri Lipsanend
aLapenrantos technologijos universitetas, Lapenranta, Suomija
bJofės fizikos technikos institutas, Sankt Peterburgas, Rusija
cValstybinis informacinių technologijų, mechanikos ir optikos universitetas, Sankt Peterburgas, Rusija
dAlto universitetas, Suomija

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